on January 13th 5,851

IRF630 N-Channel Power MOSFET: Features, Pinout, and Datasheet

This guide explores the features of the IRF630, a durable N-channel MOSFET known for its high voltage handling and low on-resistance in a TO-220 package. It covers the pinout, applications, and datasheet to help you understand how to use this component effectively. By highlighting its performance and practical uses, this article aims to give you the knowledge to make the most of the IRF630 in your electronic projects.

Catalog

Overview of the IRF630

The IRF630 is recognized for its impressive 200 V N-channel power MOSFET attributes, in addition to possessing an on-resistance of 0.29 Ω and sustaining a continuous current of 9 A. Encased in a TO-220 package, this device harnesses STMicroelectronics' pioneering STripFET™ process, which effectively reduces input capacitance and gate charge. These characteristics render the IRF630 suitable as a primary switch in cutting-edge, energy-conscious isolated DC-DC converters. The STripFET™ technology elevates the IRF630's efficiency by refining its switching speed and minimizing losses. This technological leap ensures the device's capability to handle higher frequencies, aligning well with modern power applications. The reduction in gate charge results in lower power consumption, which increases overall system efficiency. The reliability and robustness of this MOSFET cater to its use in a wide range of challenging applications. The IRF630 is highly regarded in practical scenarios for its stability and performance under intense conditions encountered in industrial and electronics.

IRF630 Pin Configuration

Pin No.	Pin Name	Function
1	Gate	Controls electron flow between source and drain; acts as a switch to turn the MOSFET on or off. Requires precise voltage handling, often protected by gate resistors.
2	Drain	Exit point for the main current. Connected to the load in circuit diagrams; heat dissipation techniques like heat sinks are used to manage high current flow.
3	Source	Entry terminal for current, typically connected to ground. Maintains reference voltage and helps reduce electromagnetic interference.

IRF630 CAD Model

IRF630 Symbol

IRF630 Footprint

IRF630 3D Model

Features of the IRF630

dv/dt Performance

Celebrated for its remarkable dv/dt performance, the IRF630 thrives in environments demanding quick voltage transitions. This capability is beneficial for applications needing rapid adjustments, supporting both efficiency and dependability. For example, sophisticated power switching systems harness this ability to enhance functionality amid dynamic load scenarios.

Intrinsic Capacitance

The IRF630 features a notably low intrinsic capacitance, for minimizing power losses and boosting overall system effectiveness. Reduced capacitance lessens parasitic impacts, which can induce delays and energy wastage in high-frequency circuits.

Gate Charge

With a minimized gate charge, the IRF630 stands out in high-speed contexts. This trait lowers the energy demand for toggling the transistor state, promoting quicker switch times with reduced power consumption. Others focus on this characteristic to amplify efficiency in power conversion systems, where energy usage is meticulously managed.

IRF630 Specifications

Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	9A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	75W Tc
Operating Temperature	-65°C~150°C TJ
Packaging	Tube
Series	MESH OVERLAY™ II
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	400mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	200V
Current Rating	9A
Base Part Number	IRF6
Pin Count	3
Lead Pitch	2.54mm
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	75W
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	400mΩ @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	15ns
Vgs (Max)	±20V
Reverse Recovery Time	170 ns
Continuous Drain Current (ID)	9A
Threshold Voltage	3V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	200V
Dual Supply Voltage	200V
Nominal Vgs	3 V
Feedback Cap-Max (Crss)	50 pF
Height	15.75mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Alternatives for IRF630

Part Number	Description	Manufacturer
IRF630	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Philips Semiconductors
SIHF630-E3	TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power	Vishay Siliconix
SIHF630	TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, FET General Purpose Power	Vishay Siliconix
IRF630PBF	Power Field-Effect Transistor, 9A (ID), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN	Vishay Siliconix

SIHF630 vs. IRF630

Parts	IRF630	SIHF630
Ihs Manufacturer	STMICROELECTRONICS	VISHAY SILICONIX
Reach Compliance Code	not compliant	unknown
HTS Code	8541.29.00.95
Factory Lead Time	12 Weeks
Samacsys Description	IRF630, N-channel MOSFET Transistor 9 A 200 V, 3-Pin TO-220
Samacsys Manufacturer	STMicroelectronics
Avalanche Energy Rating (Eas)	160 mJ	250 mJ
Feedback Cap-Max (Crss)	50 pF	250 pF
JESD-609 Code	e3	e0
Power Dissipation Ambient-Max	100 W
Power Dissipation-Max (Abs)	75 W	74 W
Terminal Finish	Matte Tin (Sn)	Tin/Lead (Sn/Pb)
Turn-on Time-Max (ton)	180 ns
Base Number Matches	6	11
Pbfree Code	Yes	No
Rohs Code	Yes	No

IRF630 Applications

Switching Applications: The IRF630 is commonly used in circuits that require fast and reliable switching. It is ideal for power supplies, motor controls, and lighting systems, where it helps improve energy efficiency by reducing heat and power loss.

Power Supplies: In power supply circuits such as voltage regulators, inverters, and DC-DC converters, the IRF630 manages power flow efficiently, minimizing energy loss and heat. It is also used in uninterruptible power supplies (UPS) to ensure a stable power output during voltage fluctuations.

Motor Control: The IRF630 is widely used in DC motor drivers and PWM control systems, helping to adjust motor speed and torque in devices like fans, pumps, robots, and electric vehicles. Its fast switching improves performance and power efficiency in motor systems.

Audio Amplifiers: In Class D audio amplifiers, the IRF630 allows high-quality sound output with minimal heat. It is commonly used in home audio systems, car audio, and portable speakers, ensuring efficient and reliable performance.

LED Lighting: The IRF630 is useful in controlling LED lighting systems, including dimmable lights and smart lighting solutions. It helps manage power efficiently in street lights, automotive lights, and home lighting systems.

Solar and Renewable Energy Systems: The IRF630 is used in solar inverters to convert DC power from solar panels into usable AC power. It’s also found in battery storage systems and wind energy setups, improving energy conversion and minimizing power loss.

Battery Management Systems (BMS): In battery management systems, the IRF630 controls battery charging and discharging, extending battery life and preventing overcharging or overheating. It’s important for devices like electric vehicles and portable electronics.

Industrial Automation: The IRF630 is used in automation systems to control relays, solenoids, and actuators in factories and machinery. Its durability and fast switching make it reliable for handling heavy loads in industrial environments.

High-Frequency Circuits: Due to its fast switching capabilities, the IRF630 is suitable for high-frequency applications like RF amplifiers, oscillators, and telecommunications. It helps maintain stable signals in wireless systems.

Protection Circuits: The IRF630 is used in protection circuits to prevent damage from voltage spikes or incorrect power connections. It ensures safety by quickly cutting off power during faults.

Evaluation of IRF630 Circuitry

Test Circuit for Inductive Load Switching and Diode Recovery Times

Test Circuit for Resistive Load Switching Times

Unclamped Inductive Load Test Circuit

Test Circuit for Gate Charge Behavior

Unclamped Inductive Waveform

Switching Time Waveform

Package for IRF630

Manufacturer of the IRF630

STMicroelectronics emerges as an influential force within the semiconductor sector. STMicroelectronics excels in crafting silicon-based semiconductors. This proficiency reflects a devotion to ongoing innovation and years of diligent refinement to align with market shifts. Continuous research and development efforts fuel the creation of advanced, reliable products for a global audience. The company's core competency in system integration distinguishes it in the industry. Through comprehensive integration methodologies, STMicroelectronics designs solutions for intricate applications across various sectors, such as automotive and electronics. STMicroelectronics continuously adapts a visionary outlook recognizing the semiconductor industry's evolution. This ongoing pursuit of enhancement manifests across product innovation and larger strategic projects. The perspective, shaped by empirical knowledge and keen market observations, shows the role of flexibility and foresight in an industry defined by rapid technological progression. Aligning resources and strategies with emerging patterns allows STMicroelectronics to uphold its leadership role, establishing benchmarks in efficiency and technological prowess that inspire peers within the sector.

Datasheet

IRF630 Datasheets:

IRF630(FP).pdf

IRF630PBF Datasheets:

IRF630.pdf