Manufacturer Part Number
STU6N62K3
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with low on-resistance and high breakdown voltage.
Product Features and Performance
620V drain-source voltage
Low on-resistance of 1.2Ω at 2.8A, 10V
5A continuous drain current at 25°C
90W maximum power dissipation
Wide operating temperature range up to 150°C
Low gate charge of 30nC at 10V
Product Advantages
Excellent efficiency and power density
Reliable performance in high voltage and high current applications
Suitable for various power conversion and motor control circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 620V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.2Ω
Drain Current (Id): 5.5A
Power Dissipation (Ptot): 90W
Operating Temperature (Tj): 150°C
Quality and Safety Features
RoHS3 compliant
TO-251 (IPAK) package for secure mounting and heat dissipation
Compatibility
Suitable for various power conversion and motor control applications.
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial and home appliances
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options are available from STMicroelectronics.
Key Reasons to Choose This Product
High voltage and high current handling capability
Excellent efficiency and power density
Reliable performance in harsh environments
Compact and thermally efficient package
Broad application compatibility
STU666SSAMHOP
STU6N60DM2STMicroelectronicsMOSFET N-CH 600V 5A IPAK