Manufacturer Part Number
STU6N65M2
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
650V Drain to Source Voltage
35Ω Rds On (Max) @ 2A, 10V
4A Continuous Drain Current (Tc)
226pF Input Capacitance (Max) @ 100V
60W Power Dissipation (Max)
-55°C ~ 150°C Operating Temperature
Product Advantages
RoHS3 Compliant
TO-251 (IPAK) Package
MDmesh Series
Key Technical Parameters
Vgs (Max): ±25V
Vgs(th) (Max) @ 250A: 4V
Gate Charge (Qg) (Max) @ 10V: 9.8nC
Drive Voltage (Max Rds On, Min Rds On): 10V
Quality and Safety Features
Complies with RoHS3 Directive
Compatibility
Through Hole Mounting Type
Application Areas
Suitable for a wide range of power applications
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose this Product
High voltage, low Rds(on) performance
Compact TO-251 (IPAK) package
RoHS3 compliance
Wide operating temperature range
Suitable for various power applications
STU660SAMHOP