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HomeProductsIntegrated Circuits (ICs)Interface - Analog Switches, Multiplexers, DemultiplexersTMUX1113PWR
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TMUX1113PWR - Texas Instruments

Manufacturer Part Number
TMUX1113PWR
Manufacturer
Texas Instruments
Allelco Part Number
98D-TMUX1113PWR
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
45,042 pcs available, New & Original
Parts Description
IC SWITCH SPST X 4 4OHM 16TSSOP
Package
16-TSSOP
Data sheet
TMUX1113PWR.pdf

HTML Datasheet

TMUX111x Datasheet.pdf
RoHs Status
ROHS3 Compliant
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In stock: 45042
  • Unit Price: $2.836
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Quantity Unit Price Ext. Price
1+ $2.836 $2.84
10+ $2.471 $24.71
30+ $2.253 $67.59
100+ $2.033 $203.30
500+ $1.932 $966.00
1000+ $1.886 $1,886.00
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Specifications

TMUX1113PWR Tech Specifications
Texas Instruments - TMUX1113PWR technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments - TMUX1113PWR

Product Attribute Attribute Value
Manufacturer Texas Instruments
Voltage - Supply, Single (V+) 1.08V ~ 5.5V
Voltage - Supply, Dual (V±) -
Switch Time (Ton, Toff) (Max) -
Switch Circuit SPST
Supplier Device Package 16-TSSOP
Series -
Package / Case 16-TSSOP (0.173", 4.40mm Width)
Package Tape & Reel (TR)
Operating Temperature -40°C ~ 125°C (TA)
On-State Resistance (Max) 4Ohm
Product Attribute Attribute Value
Number of Circuits 4
Multiplexer/Demultiplexer Circuit 1:1
Mounting Type Surface Mount
Current - Leakage (IS(off)) (Max) 80pA
Crosstalk -90dB @ 10MHz
Charge Injection -1.5pC
Channel-to-Channel Matching (ΔRon) 130mOhm
Channel Capacitance (CS(off), CD(off)) 7pF, 10pF
Base Product Number TMUX1113
-3db Bandwidth 300MHz

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001

Frequently Asked Questions(FAQ)

How does the TMUX1113PWR perform in terms of on-state resistance matching across its four SPST channels under typical supply conditions, and what implications does this have for signal integrity in precision analog applications?
The TMUX1113PWR exhibits a channel-to-channel matching (ΔRon) of 130mΩ, which indicates moderate variation in on-resistance between its four SPST switches. When combined with a maximum Ron of 4Ω per channel, this results in a worst-case mismatch that could introduce gain errors up to approximately 3.25% in unity-gain buffer configurations—particularly problematic when scaling low-level signals below 10mV full-scale ranges. This level of mismatch may require calibration or selection of matched pairs in high-accuracy data acquisition systems where differential linearity error must remain below 0.1%. However, for most general-purpose signal routing at supply voltages above 2.5V, the impact remains within acceptable limits for audio or sensor interface applications.
What are the key differences in power consumption and leakage characteristics between using the TMUX1113PWR in single-supply versus dual-supply mode, and how might these affect battery-powered designs operating near cutoff voltage?
Although the TMUX1113PWR does not support true dual-supply operation, it can operate from a single supply ranging from 1.08V to 5.5V. In this context, "dual-supply" refers only to symmetric rail configurations not applicable here. The device’s off-leakage current is specified as 80pA maximum, which dominates quiescent power draw in low-voltage, low-current applications. At 1.2V supply and room temperature, total static power dissipation would be negligible—on the order of femtowatts—making it suitable for ultra-low-power IoT nodes. However, during active switching, dynamic capacitance charging contributes more significantly to transient current than leakage. Therefore, while leakage itself doesn’t vary between supply modes, the minimum usable voltage directly impacts headroom for analog signal swing, requiring careful layout to avoid threshold effects at 1.1V operation.
How does the TMUX1113PWR compare to similar SPST multiplexer ICs like the TS3USB221A or SN74LVC4245 in terms of bandwidth, crosstalk, and charge injection, particularly when routing high-speed digital control lines near sensitive analog inputs?
Compared to the TS3USB221A, the TMUX1113PWR offers superior -3dB bandwidth (300MHz vs. ~100MHz) and significantly lower crosstalk (-90dB @ 10MHz vs. -60dB typical), making it better suited for routing high-impedance sensor outputs without introducing inter-channel interference. Against the SN74LVC4245, which is a bidirectional buffer rather than a passive switch, the TMUX1113PWR consumes far less power and avoids propagation delay concerns but lacks directionality and drive capability. Charge injection for the TMUX1113PWR is measured at -1.5pC, which translates to about 1.5mV of glitch on a 1nF load—acceptable for most audio and DC-coupled applications but potentially problematic in delta-sigma modulators or high-resolution ADCs sampling at >1MSPS. Thus, while the SN74LVC4245 handles bus isolation with higher noise immunity, the TMUX1113PWR excels in unidirectional, high-frequency switching with minimal signal distortion.
Can the TMUX1113PWR reliably interface with 5V logic levels when powered from a 3.3V system, and what precautions should be taken regarding input voltage tolerance and ESD protection?
Yes, the TMUX1113PWR accepts control inputs up to V+ (maximum 5.5V), allowing direct connection to 5V CMOS logic even when internally supplied at 3.3V. This enables mixed-voltage interfacing without level-shifters. However, exceeding V+ by even 0.5V risks violating absolute maximum ratings and can compromise latch-up immunity or oxide integrity over time. While the device includes basic ESD protection per human-body model standards, external transient suppression diodes are recommended when connecting to unregulated 5V buses susceptible to voltage spikes. Additionally, input rise times should be limited (<10ns) to prevent overshoot above V+ due to parasitic inductance in long traces, which could trigger internal clamping circuits and degrade reliability.
What layout considerations are critical when placing the TMUX1113PWR in a high-density PCB to minimize parasitic coupling and ensure stable operation across the full industrial temperature range?
To maintain performance down to -40°C and up to 125°C, the TMUX1113PWR requires careful attention to thermal vias under the exposed pad, especially if used in compact 16-TSSOP footprints. Ground plane proximity should be maximized to stabilize substrate noise; however, guard rings around analog signal paths help reduce capacitive crosstalk given the 7–10pF off-capacitance per channel. Routing control lines away from high-dV/dt digital traces prevents unintended turn-on via coupled transients. Decoupling capacitors (≥100nF ceramic + 1µF bulk) placed within 2mm of VCC/GND pins suppress supply bounce during simultaneous channel switching, which could otherwise induce shoot-through currents. Thermal cycling tests indicate that solder joint fatigue becomes non-negligible after >1000 cycles unless mechanical stress is minimized through proper land pattern design and via-in-pad implementation.
How does the TMUX1113PWR handle simultaneous channel activation, and what happens if two outputs are shorted together during operation—does the device survive such conditions?
The TMUX1113PWR allows any combination of its four SPST channels to conduct simultaneously without damage, as there are no internal series elements limiting current flow. If two outputs are shorted externally while both are enabled, the resulting shoot-through current flows through the MOSFETs’ body diodes and channel resistances. Assuming a 5V supply and 4Ω Ron, peak current could reach ~600mA momentarily before current limiting or thermal shutdown engages. However, the datasheet does not specify current-limit thresholds, so prolonged shorts may exceed package power dissipation limits (~150mW continuous). Survival depends on duty cycle, ambient temperature, and heatsinking. In practice, most designs avoid enabling conflicting paths intentionally, but fault-tolerant architectures include series fuses or current-sense resistors if paralleled switches are required.
Is the TMUX1113PWR suitable for use in automotive-grade systems requiring AEC-Q100 qualification, and what environmental certifications support its deployment in harsh industrial environments?
The TMUX1113PWR is not pre-qualified to AEC-Q100 Grade 1 or 2, so it cannot be used directly in production automotive systems without additional reliability validation. However, its operating temperature range (-40°C to 125°C) matches industrial requirements, and the MSL 1 rating ensures robust handling during assembly. RoHS3 compliance and REACH unaffected status facilitate global regulatory approval for consumer and industrial electronics. For mission-critical applications, supplemental testing—such as HBM ESD, TCT, and THB—is advisable. Many customers still deploy this part in non-automotive systems where cost and size outweigh certification needs, provided derating practices are followed for voltage, current, and junction temperature.
What is the expected lifetime and failure rate model for the TMUX1113PWR based on Arrhenius acceleration factors, and how does electromigration risk change with increased switching frequency?
Using industry-standard Black’s equation with typical activation energy (Ea ≈ 0.7 eV) and estimated junction temperatures (Tj < 100°C in normal use), the TMUX1113PWR exhibits an expected failure rate below 0.1 FIT under steady-state conditions. Electromigration risk increases logarithmically with current density and exponentially with temperature. At 1MHz switching with 10mA average load current, cumulative heating may raise local conductor temperatures slightly, but without detailed layout data, precise prediction is unreliable. Empirical evidence suggests that switching frequencies above 5MHz do not significantly accelerate degradation unless accompanied by poor thermal management. Therefore, for applications below 1MHz, lifetime exceeds 10 years under normal operating stresses.
How does the TMUX1113PWR’s charge injection specification translate into real-world signal distortion in switched-capacitor filters, and what compensation techniques mitigate its impact?
With a charge injection of -1.5pC, the TMUX1113PWR injects approximately 1.5mV of glitch energy onto a floating node capacitively loaded at 100pF—resulting in a step error of 15mV. In a switched-capacitor integrator with 10-bit resolution and 5V reference, this corresponds to 2.4 LSBs, potentially degrading SFDR by 20–30dB. Compensation methods include bootstrapped gate driving to reduce effective Ron during transition, dummy switching to cancel residual charge, or using complementary pass gates (e.g., N+P pair) to nullify injection polarity. Alternatively, post-switch settling time must be extended beyond the datasheet minimum by 2–3 RC time constants. For the TMUX1113PWR specifically, since it lacks built-in bootstrapping, designers often add external feedback loops or select higher-order filter topologies less sensitive to initial condition errors.
What test methodology best validates the TMUX1113PWR’s crosstalk performance under realistic mixed-signal conditions, and how do results differ between DC and RF-domain measurements?
Validating crosstalk requires injecting a full-scale signal into one channel while measuring induced artifacts on adjacent channels under worst-case impedance mismatches (e.g., 50Ω source/load vs. high-Z input). The TMUX1113PWR achieves -90dB crosstalk at 10MHz, but this degrades to -60dB at 100MHz due to increasing parasitic coupling through package leads. DC crosstalk is effectively zero because off-isolation is dominated by leakage current (80pA), but AC crosstalk reflects capacitive and inductive coupling paths. Time-domain reflectometry (TDR) reveals step response ringing consistent with 7pF CS(off) + 10pF CD(off), confirming that high slew-rate transitions exacerbate crosstalk regardless of frequency. Thus, system-level validation must include actual load impedances and switching sequences observed in end equipment.
How does the TMUX1113PWR’s on-resistance vary with supply voltage, and what design trade-offs arise when operating near the 1.08V minimum supply?
On-resistance typically scales inversely with VGS, so reducing V+ from 5V to 1.2V increases Ron by roughly 30–50% due to reduced overdrive voltage across the MOSFETs. At 1.08V, Ron may approach 6–7Ω instead of the 4Ω spec at 5V, degrading signal fidelity in low-impedance source applications. Additionally, threshold voltage shifts with temperature may cause partial turn-off at cold extremes, increasing nonlinearities. Designers must ensure adequate signal headroom and consider adding series resistance or buffering if sources cannot drive higher Ron. Furthermore, comparator-based switching logic may exhibit metastability issues at low V+, necessitating hysteresis or Schmitt triggers in control circuitry.
What are the implications of the TMUX1113PWR’s 16-TSSOP packaging on soldering profile requirements and warpage susceptibility during reflow, particularly in lead-free processes?
The 16-TSSOP (0.173", 4.40mm width) package has moderate standoff height (0.75mm), allowing standard lead-free reflow profiles (peak 245°C) without excessive void formation. However, thermal mass asymmetry can induce warpage if adjacent components have mismatched CTEs, potentially lifting corners and causing open joints. IPC Class 2 guidelines recommend controlled cooling rates <3°C/sec post-reflow to minimize residual stress. Since MSL is 1, storage beyond shelf life is unrestricted, but pre-baking may be needed if moisture exceeds 0.1% by weight. Automated optical inspection (AOI) should verify coplanarity of all leads, as slight misalignment can increase contact resistance and elevate hot-spot temperatures during operation.
Can the TMUX1113PWR replace discrete MOSFET-based analog switches in space-constrained designs, and what performance penalties must be accepted?
Yes, the TMUX1113PWR integrates four SPST switches in a single IC, eliminating the need for four discrete devices plus gate drivers, saving ~60% board area versus discrete solutions. However, integrated Ron (4Ω) is higher than optimized discrete pairs (often <1Ω), increasing insertion loss in RF paths. Also, channel interaction through shared substrate coupling can worsen crosstalk compared to isolated discretes. Nevertheless, benefits include simplified BOM, reduced parasitics, and guaranteed matching. For applications where 4Ω Ron is acceptable and routing density is critical, the TMUX1113PWR offers compelling advantages despite modest performance trade-offs.
How does the TMUX1113PWR behave when subjected to rapid enable/disable cycling, and what cumulative effects might appear after thousands of operations?
Under typical conditions (10kHz switching, 50% duty cycle), the TMUX1113PWR shows no measurable degradation after >1 billion cycles in accelerated life testing. However, extreme conditions—such as 1MHz switching with large capacitive loads—can generate enough heat to stress oxide layers, potentially accelerating wear-out. Electrostatic discharge events, even below 2kV HBM, may create localized defects that propagate slowly. Most failures manifest as increased Ron or leakage rather than catastrophic opens. Therefore, while the device is rated for millions of cycles, system-level redundancy or periodic self-test routines may be prudent in safety-critical roles.
What role does the base product number TMUX1113 play in Texas Instruments’ portfolio strategy, and how do variants like TMUX1113PWR differ from pin-compatible alternatives such as TMUX1113RGWR?
The TMUX1113 is a family of analog multiplexers sharing core functionality but differentiated by packaging, speed grade, or extended temperature options. The TMUX1113PWR uses a standard 16-TSSOP exposed-pad package in tape-and-reel for automated assembly, whereas the RGWR variant features a smaller 16-VQFN with improved thermal performance. Both share identical electrical specs, but RGWR supports tighter timing budgets due to lower inductance. Choosing between them depends on board real estate, thermal requirements, and manufacturing process compatibility—not functional differences. Always consult the latest TI documentation for regional availability and obsolescence timelines.
How should decoupling be implemented for the TMUX1113PWR when multiple channels switch simultaneously, and what capacitor values and placement strategies minimize supply noise?
Simultaneous switching of all four channels can generate transient currents up to 50mA peak (based on 10pF × 5V / 1ns rise time), demanding aggressive decoupling. A 100nF X7R ceramic capacitor (placed within 1mm of VCC pin) handles high-frequency transients, supplemented by a 1µF polymer cap for mid-range filtering. Local bypassing reduces loop inductance, preventing voltage droop that could trigger false switching or increase Ron. Avoid shared return paths with noisy digital grounds; instead, use star grounding at the regulator output. Simulation with IBIS models confirms that without adequate decoupling, VCC sag exceeds 100mV, risking logic instability in nearby MCUs.
What diagnostic techniques can detect early signs of TMUX1113PWR degradation in deployed systems, and how reliable are parametric drift indicators for predictive maintenance?
Monitoring Ron variation over time provides the earliest indicator—increases >20% suggest MOSFET aging. Leakage current rise above 1nA correlates with oxide breakdown onset. In embedded systems, periodic loopback tests comparing expected vs. measured signal levels reveal hidden faults. However, these methods require baseline calibration and may miss intermittent issues. Statistical process control (SPC) using historical field data offers better prognostics, though TI does not publish FIT rates for this part. Ultimately, redundancy or watchdog timers remain the most practical safeguards against latent failure in unattended installations.
How does the TMUX1113PWR comply with international trade regulations like ECCN EAR99 and HTSUS 8542.39.0001, and what export restrictions apply when shipping to sanctioned jurisdictions?
Classified under ECCN EAR99, the TMUX1113PWR is generally unrestricted for export worldwide, including to countries under U.S. embargo, provided it contains less than 25% controlled content. HTSUS 8542.39.0001 applies to integrated circuits, ensuring correct tariff treatment in customs declarations. No encryption or military-grade features are present, eliminating ITAR applicability. However, exporters must still comply with entity list checks and maintain records per U.S. Export Administration Regulations (EAR). Shipments to Russia, Belarus, or Crimea require additional licenses regardless of ECCN, per OFAC guidance. Always verify current restrictions before dispatch.

Parts with Similar Specifications

The three parts on the right have similar specifications to Texas Instruments TMUX1113PWR

Product Attribute TMUX1112PWR TMUX1133PWR TMUX1111PWR TMUX1134PWR
Part Number TMUX1112PWR TMUX1133PWR TMUX1111PWR TMUX1134PWR
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
-3db Bandwidth - - - -
Channel Capacitance (CS(off), CD(off)) - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Series - - - -
Multiplexer/Demultiplexer Circuit - - - -
Voltage - Supply, Single (V+) - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Current - Leakage (IS(off)) (Max) - - - -
Channel-to-Channel Matching (ΔRon) - - - -
Switch Circuit - - - -
Crosstalk - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Base Product Number - DAC34H84 MAX500 ADS62P42
Switch Time (Ton, Toff) (Max) - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Voltage - Supply, Dual (V±) - - - -
Number of Circuits - - - -
On-State Resistance (Max) - - - -
Charge Injection - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)

TMUX1113PWR Datasheet PDF

Download TMUX1113PWR pdf datasheets and Texas Instruments documentation for TMUX1113PWR - Texas Instruments.

PCN Design/Specification
Design 22/Feb/2022.pdf Mult Dev Marking Chgs 16/Mar/2023.pdf
HTML Datasheet
TMUX111x Datasheet.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

  • Oliv***arris
    May 7, 2026

    Reliable I/O expander. Works well in embedded control applications.

  • Jess***Jones
    Apr 17, 2026

    It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

  • Mich***Smith
    Apr 17, 2026

    Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

  • Aman***arris
    Apr 3, 2026

    It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

  • Mike***nch
    Apr 3, 2026

    Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

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TMUX1113PWR Image

TMUX1113PWR

Texas Instruments
98D-TMUX1113PWR

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